Datasheet Details
| Part number | FDMS2672 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 537.14 KB |
| Description | N-Channel UltraFET Trench MOSFET |
| Datasheet | FDMS2672_FairchildSemiconductor.pdf |
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Overview: FDMS2672 N-Channel UltraFET Trench MOSFET February 2007 FDMS2672 N-Channel UltraFET Trench MOSFET 200V, 20A,.
| Part number | FDMS2672 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 537.14 KB |
| Description | N-Channel UltraFET Trench MOSFET |
| Datasheet | FDMS2672_FairchildSemiconductor.pdf |
|
|
|
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Max rDS(on) = 77mΩ at VGS = 10V, ID = 3.7A Max rDS(on) = 88mΩ at VGS = 6V, ID = 3.5A Low Miller Charge RoHS Compliant tm Application DC - DC Conversion Pin 1 S S S G D D www.DataSheet4U.com 5 6 7 8 4 G 3 S 2 S 1 S D D D D D D Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Silicon limited) -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC = 25°C TA = 25°C (Note 1a) TC = 25°C TA = 25°C (Note 1a) Ratings 200 ±20 20 3.7 20 78 2.5 -55 to +150 W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.6 50 °C/W Package Marking and Ordering Information Device Marking FDMS2672 Device FDMS2672 Package Power 56 Reel Size 13’’ Tape Width 12mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDMS2672 Rev.C 1 www.fairchildsemi.com FDMS2672 N-Channel UltraFET Trench MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 160V VGS = ±20V, VDS = 0V 200 210 1 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Thr
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMS2672 | N-Channel MOSFET | ON Semiconductor |
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