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FDMS2672 - N-Channel UltraFET Trench MOSFET

General Description

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.

Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Max rDS(on) = 77mΩ at VGS = 10V, ID = 3.7A

Key Features

  • General.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS2672 N-Channel UltraFET Trench MOSFET February 2007 FDMS2672 N-Channel UltraFET Trench MOSFET 200V, 20A, 77mΩ Features General Description UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. „ Max rDS(on) = 77mΩ at VGS = 10V, ID = 3.7A „ Max rDS(on) = 88mΩ at VGS = 6V, ID = 3.5A „ Low Miller Charge „ RoHS Compliant tm Application „ DC - DC Conversion Pin 1 S S S G D D www.DataSheet4U.