FDMS2672 Datasheet | Fairchild Semiconductor

FDMS2672 N-Channel Ultra FET Trench MOSFET February 2007 FDMS2672 N-Channel Ultra FET Trench MOSFET 200V, 20A, 77mΩ Features General Description UItra FET devices bine characteristics that enable benchmark efficiency in power conversion applications. Optimized for r DS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. - Max r DS(on) = 77mΩ at VGS = 10V, ID = 3.7A - Max r DS(on) = 88mΩ at VGS = 6V, ID = 3.5A - Low Miller Charge - Ro HS pliant tm Application - DC - DC Conversion Pin 1 .. 5 6 7 8 4 G 3 S 2 S 1 S Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Silicon limited) -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC = 25°C TA = 25°C (Note 1a) TC = 25°C TA = 25°C (Note 1a) Ratings 200 ±20 20 3.7 20 78 2.5 -55 to +150 W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.6 50 °C/W Package Marking and Ordering Information Device Marking FDMS2672 Device FDMS2672 Package Power 56 Reel Size 13’’ Tape Width 12mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDMS2672 Rev.C .fairchildsemi. FDMS2672 N-Channel Ultra FET Trench MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics...