FDMS2672 - N-Channel MOSFET

onsemi

General Description

efficiency in power conversion applications.

Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Key Features

Max rDS(on) = 77 mW at VGS = 10 V, ID = 3.7 A.
Max rDS(on) = 88 mW at VGS = 6 V, ID = 3.5 A.
Low Miller Charge.
This Device is Pb.
Free and is RoHS Compliant.

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FDMS2672 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMS2672
Manufacturer	onsemi
File Size	298.96 KB
Description	N-Channel MOSFET
Datasheet	FDMS2672 Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET – N-Channel, UltraFET Trench 200 V, 20 A, 77 mW FDMS2672 General Description UItraFETt devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features • Max rDS(on) = 77 mW at VGS = 10 V, ID = 3.7 A • Max rDS(on) = 88 mW at VGS = 6 V, ID = 3.