FDMS2672
FDMS2672 is N-Channel MOSFET manufactured by onsemi.
MOSFET
- N-Channel, Ultra FET Trench
200 V, 20 A, 77 m W
General Description UItra FETt devices bine characteristics that enable benchmark efficiency in power conversion applications. Optimized for r DS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Features
- Max r DS(on) = 77 m W at VGS = 10 V, ID = 3.7 A
- Max r DS(on) = 88 m W at VGS = 6 V, ID = 3.5 A
- Low Miller Charge
- This Device is Pb- Free and is Ro HS pliant
Application
- DC- DC Conversion
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current:
- Continuous, TC = 25°C (Note 5)
- Continuous, TC = 100°C (Note 5)
- Continuous, TA = 25°C (Note 1a)
- Pulsed (Note 4)
±20
A 20 13 3.7 96
EAS PD
TJ, TSTG
Single Pulse Avalanche Energy (Note 3)
Power Dissipation: TC = 25°C TA = 25°C (Note 1a)
Operating and Storage Junction Temperature Range
33.8 m...
