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FDMS2734 - N-Channel MOSFET

Description

efficiency in power conversion applications.

Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Features

  • Max RDS(on) = 122 mW at VGS = 10 V, ID = 2.8 A.
  • Max RDS(on) = 130 mW at VGS = 6 V, ID = 1.7 A.
  • Low Miller Charge.
  • Optimized Efficiency at High Frequencies.
  • Pb.
  • Free, Halide Free and RoHS Compliant.

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Datasheet preview – FDMS2734

Datasheet Details

Part number FDMS2734
Manufacturer ON Semiconductor
File Size 279.06 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS2734 Datasheet
Additional preview pages of the FDMS2734 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, UltraFET Trench 250 V, 14 A, 122 mW FDMS2734 General Description UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features • Max RDS(on) = 122 mW at VGS = 10 V, ID = 2.8 A • Max RDS(on) = 130 mW at VGS = 6 V, ID = 1.
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