FDMS2D4N03S Overview
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 28 A Max rDS(on) = 2.34 mΩ at VGS = 4.5 V, ID = 26 A High Performance Technology for Extremely Low rDS(on) SyncFETTM Schottky Body Diode 100% UIL Tested RoHS pliant The FDMS2D4N03S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining...
FDMS2D4N03S Key Features
- Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 28 A
- Max rDS(on) = 2.34 mΩ at VGS = 4.5 V, ID = 26 A
- High Performance Technology for Extremely Low rDS(on)
- SyncFETTM Schottky Body Diode
- 100% UIL Tested
- RoHS pliant