Datasheet Summary
FDMS2D4N03S N-Channel PowerTrench® MOSFET
.onsemi.
N-Channel PowerTrench® SyncFETTM
30 V, 163 A, 1.8 mΩ
Features
General Description
- Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 28 A
- Max rDS(on) = 2.34 mΩ at VGS = 4.5 V, ID = 26 A
- High Performance Technology for Extremely Low rDS(on)
- SyncFETTM Schottky Body Diode
- 100% UIL Tested
- RoHS pliant
The FDMS2D4N03S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body...