FDMS2D4N03S Overview
Description
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 28 A - Max rDS(on) = 2.34 mΩ at VGS = 4.5 V, ID = 26 A - High Performance Technology for Extremely Low rDS(on) - SyncFETTM Schottky Body Diode - 100% UIL Tested - RoHS Compliant The FDMS2D4N03S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
