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FDMS2D4N03S - N-Channel Power MOSFET

Description

Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 28 A Max rDS(on) = 2.34 mΩ at VGS = 4.5 V, ID = 26 A High Performance Technology for Extremely Low rDS(on) SyncFETTM Schottky Body Diode 100% UIL Tested RoHS Compliant The FDMS2D4N03S has been desi

Features

  • General.

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FDMS2D4N03S N-Channel PowerTrench® MOSFET www.onsemi.com FDMS2D4N03S N-Channel PowerTrench® SyncFETTM 30 V, 163 A, 1.8 mΩ Features General Description „ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 28 A „ Max rDS(on) = 2.34 mΩ at VGS = 4.5 V, ID = 26 A „ High Performance Technology for Extremely Low rDS(on) „ SyncFETTM Schottky Body Diode „ 100% UIL Tested „ RoHS Compliant The FDMS2D4N03S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode.