Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
75 V, 49 A, 14.5 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
Features
- Max RDS(on) = 14.5 mW at VGS = 10 V, ID = 11.5 A
- Max RDS(on) = 16.3 mW at VGS = 4.5 V, ID = 10 A
- Advanced Package and Silicon bination for Low RDS(on)
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS pliant
Applications
- DC- DC Conversion
DATA SHEET .onsemi.
Top
Bottom
Pin G
DDDD
Power 56 (PQFN8) CASE 483AE
D5 D6 D7 D8
4G 3S 2S 1S
MARKING...
