Datasheet Summary
MOSFET
- P-Channel, POWERTRENCH)
-30 V, -18 A, 20 mW
General Description This P- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- Max rDS(on) = 20 mW at VGS =
- 10 V, ID =
- 9.0 A
- Max rDS(on) = 37 mW at VGS =
- 4.5 V, ID =
- 6.5 A
- Extended VGSS range (- 25 V) for battery applications
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability
- HBM ESD Protection Level >7 kV Typical (Note 4)
-...
