Datasheet Summary
MOSFET
- P-Channel, POWERTRENCH)
-100 V, -50 A, 22 mW
General Description This P- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
Features
- Max rDS(on) = 22 mW at VGS =
- 10 V, ID =
- 7.9 A
- Max rDS(on) = 30 mW at VGS =
- 6 V, ID =
- 5.9 A
- Very Low RDS- on Mid Voltage P- Channel Silicon Technology
Optimised for Low Qg
- This Product is Optimised for Fast Switching Applications
As Well As Load Switch Applications
- 100% UIL Tested
- This Device is Pb- Free, Halogen Free/BFR Free and is RoHS pliant
Applications
- Active Clamp Switch
- Load...
