Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- N-Channel, Shielded Gate, POWERTRENCH®
150 V, 62 A, 12.4 mW
Description This N- Channel MOSFET is produced using onsemi advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance and yet maintain superior switching performance.
Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 12.4 mW at VGS = 10 V, ID = 10 A
- Max RDS(on) = 15.5 mW at VGS = 6 V, ID = 8 A
- Advanced Package and Silicon bination for Low RDS(on) and
High Efficiency
- Next Generation Enhanced Body Diode Technology, Engineered for
Soft Recovery
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS...
