FDMT800120DC mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 20 A
* Max rDS(on) = 6.4 mW at VGS = 6 V, ID = 16 A
* Advanced Package and Silicon Combination for Low rDS(on)
and .
* OringFET / Load Switching
* Synchronous Rectification
* DC−DC Conversion
VDS 120 V
RDS(on) MAX 4.2 mW @ .
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