Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- N-Channel, DUAL COOL ), POWERTRENCH)
120 V, 128 A, 4.2 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction- to- Ambient thermal resistance.
Features
- Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 20 A
- Max rDS(on) = 6.4 mW at VGS = 6 V, ID = 16 A
- Advanced Package and Silicon bination for Low rDS(on) and High Efficiency
- Next Generation Enhanced Body Diode Technology,
Engineered for Soft Recovery
- Low...
