n-channel mosfet.
* Max RDS(on) = 9.0 mW at VGS = 10 V, ID = 13 A
* Max RDS(on) = 11.5 mW at VGS = 6 V, ID = 11 A
* Advanced Package and Silicon Combination for Low RDS(on)
and.
* OringFET / Load Switching
* Synchronous Rectification
* DC−DC Conversion
Pin 1
Pin 1
G S S S
S D D D D.
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extreme.
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