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FDN306P Datasheet P-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN306P General.

General Description

This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process.

It has been optimized for battery power management applications.

Key Features

  • 2.6 A,.
  • 12 V RDS(on) = 40 mW @ VGS =.
  • 4.5 V RDS(on) = 50 mW @ VGS =.
  • 2.5 V RDS(on) = 80 mW @ VGS =.
  • 1.8 V.
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • SUPERSOTt.
  • 3 Provides Low RDS(on) and 30% Higher Power Handling Capability than SOT.
  • 23 in the Same Footprint.
  • This is a Pb.
  • Free and Halide Free Device.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDN306P P-Channel MOSFET Fairchild Semiconductor

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