FDN306P - P-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDN306P
Manufacturer	ON Semiconductor
File Size	286.25 KB
Description	P-Channel MOSFET
Datasheet	FDN306P Datasheet
Additional preview pages of the FDN306P datasheet.

Product details

Description

This P Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process.It has been optimized for battery power management applications.

Features

2.6 A,.
12 V RDS(on) = 40 mW @ VGS =.
4.5 V RDS(on) = 50 mW @ VGS =.
2.5 V RDS(on) = 80 mW @ VGS =.
1.8 V.
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(on).
SUPERSOTt.
3 Provides Low RDS(on) and 30% Higher Power Handling Capability than SOT.
23 in the Same Footprint.
This is a Pb.
Free and Halide Free Device.

📁 Similar Datasheet

FDN302P - P-Channel MOSFET (Fairchild Semiconductor)
FDN304P - P-Channel MOSFET (Fairchild Semiconductor)
FDN308P - P-Channel MOSFET (Fairchild Semiconductor)
FDN327N - N-Channel MOSFET (Fairchild Semiconductor)
FDN335N - N-Channel MOSFET (Fairchild Semiconductor)
FDN336P - single P-Channel MOSFET (Fairchild Semiconductor)
FDN337N - N-Channel MOSFET (Fairchild Semiconductor)
FDN338 - FET (DCY)

Other Datasheets by ON Semiconductor

FDN304PZ - P-Channel MOSFET
FDN338P - P-Channel MOSFET
FDN339AN - N-Channel MOSFET
FDN340P - P-Channel MOSFET
FDN342P - P-Channel MOSFET
FDN352AP - P-Channel MOSFET

Published: Dec 25, 2023 |