Datasheet Summary
December 2001
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
- - 2.6 A,
- 12 V. RDS(ON) = 40 mΩ @ VGS =
- 4.5 V RDS(ON) = 50 mΩ @ VGS =
- 2.5 V RDS(ON) = 80 mΩ @ VGS =
- 1.8 V
Applications
- Battery management
- Load switch
- Battery protection
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
SuperSOT -3
TA=25oC unless otherwise...
