FDN308P Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
FDN308P Key Features
- 20 V, -1.5 A. RDS(ON) = 125 mΩ @ VGS = -4.5 V RDS(ON) = 190 mΩ @ VGS = -2.5 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint