FDN308P Description
This P−Channel 2.5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V 12 V).
FDN308P Key Features
- 20 V, -1.5 A RDS(on) = 125 mW @ VGS = -4.5 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- SUPERSOTt-3 Provides Low RDS(on) and 30% Higher Power
- This is a Pb-Free and Halide Free Device