Datasheet Details
| Part number | FDN308P |
|---|---|
| Manufacturer | onsemi |
| File Size | 287.57 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 FDN308P Datasheet
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General Description
This P
version of onsemi’s advanced POWERTRENCH process.
12 V).
Key Features
- 20 V,.
- 1.5 A RDS(on) = 125 mW @ VGS =.
- 4.5 V RDS(on) = 190 mW @ VGS =.
- 2.5 V.
- Fast Switching Speed.
- High Performance Trench Technology for Extremely Low RDS(on).
- SUPERSOTt.
- 3 Provides Low RDS(on) and 30% Higher Power Handling Capability than SOT.
- 23 in the Same Footprint.
- This is a Pb.
- Free and Halide Free Device.