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FDN304PZ - P-Channel MOSFET

General Description

This P

low voltage POWERTRECH process.

It has been optimized for battery power management applications.

Key Features

  • 20 V,.
  • 2.4 A RDS(on) = 52 mW @ VGS =.
  • 4.5 V RDS(on) = 70 mW @ VGS =.
  • 2.5 V RDS(on) = 100 mW @ VGS =.
  • 1.8 V.
  • Fast Switching Speed.
  • ESD Protection Diode.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • SUPERSOTt.
  • 3 Provides Low RDS(on) and 30% Higher Power Handling Capability than SOT.
  • 23 in the Same Footprint.
  • This is a Pb.
  • Free and Halide Free Device.

📥 Download Datasheet

Datasheet Details

Part number FDN304PZ
Manufacturer onsemi
File Size 290.75 KB
Description P-Channel MOSFET
Datasheet download datasheet FDN304PZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN304PZ General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRECH process. It has been optimized for battery power management applications. Features • –20 V, –2.4 A RDS(on) = 52 mW @ VGS = –4.5 V RDS(on) = 70 mW @ VGS = –2.5 V RDS(on) = 100 mW @ VGS = –1.8 V • Fast Switching Speed • ESD Protection Diode • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOTt−3 Provides Low RDS(on) and 30% Higher Power Handling Capability than SOT−23 in the Same Footprint • This is a Pb−Free and Halide Free Device Applications • Battery Management • Load Switch • Battery Protection ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.