FDN304PZ
Description
This P-Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRECH process. It has been optimized for battery power management applications.
Key Features
- 20 V, –2.4 A RDS(on) = 52 mW @ VGS = –4.5 V RDS(on) = 70 mW @ VGS = –2.5 V RDS(on) = 100 mW @ VGS = –1.8 V
- Fast Switching Speed
- ESD Protection Diode
- High Performance Trench Technology for Extremely Low RDS(on)
- SUPERSOTt-3 Provides Low RDS(on) and 30% Higher Power Handling Capability than SOT-23 in the Same Footprint
- This is a Pb-Free and Halide Free Device
