Datasheet Summary
MOSFET
- P-Channel 1.8 V Specified POWERTRENCH)
General Description This P- Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications.
Features
- - 2.4 A,
- 20 V
- RDS(ON) = 52 mW @ VGS =
- 4.5 V
- RDS(ON) = 70 mW @ VGS =
- 2.5 V
- RDS(ON) = 100 mW @ VGS =
- 1.8 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTt- 23 provides Low RDS(ON) and 30% Higher Power
Handling Capability than SOT23 in the same Footprint
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant
Applications
- Battery Management
- Load Switch
- Battery...
