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FDN304P - P-Channel MOSFET

General Description

This P

low voltage POWERTRENCH process.

It has been optimized for battery power management applications.

Key Features

  • 2.4 A,.
  • 20 V.
  • RDS(ON) = 52 mW @ VGS =.
  • 4.5 V.
  • RDS(ON) = 70 mW @ VGS =.
  • 2.5 V.
  • RDS(ON) = 100 mW @ VGS =.
  • 1.8 V.
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SUPERSOTt.
  • 23 provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT23 in the same Footprint.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Comp.

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Datasheet Details

Part number FDN304P
Manufacturer onsemi
File Size 277.95 KB
Description P-Channel MOSFET
Datasheet download datasheet FDN304P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel 1.8 V Specified POWERTRENCH) FDN304P General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features • −2.4 A, −20 V ♦ RDS(ON) = 52 mW @ VGS = −4.5 V ♦ RDS(ON) = 70 mW @ VGS = −2.5 V ♦ RDS(ON) = 100 mW @ VGS = −1.8 V • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(ON) • SUPERSOTt−23 provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT23 in the same Footprint • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Battery Management • Load Switch • Battery Protection DATA SHEET www.onsemi.com SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.