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FDN302P - P-Channel MOSFET

General Description

This P

version of onsemi’s advanced POWERTRENCH process.

12 V).

Key Features

  • 20 V,.
  • 2.4 A RDS(ON) = 0.055 W @ VGS =.
  • 4.5 V RDS(ON) = 0.080 W @ VGS =.
  • 2.5 V.
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SUPERSOTt.
  • 3 Provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT.
  • 23 in the Same Footprint.
  • This is a Pb.
  • Free and Halide Free Device.

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Datasheet Details

Part number FDN302P
Manufacturer onsemi
File Size 300.83 KB
Description P-Channel MOSFET
Datasheet download datasheet FDN302P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN302P General Description This P−Channel 2.5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V − 12 V). Features • −20 V, −2.4 A RDS(ON) = 0.055 W @ VGS = −4.5 V RDS(ON) = 0.080 W @ VGS = −2.5 V • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(ON) • SUPERSOTt−3 Provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT−23 in the Same Footprint • This is a Pb−Free and Halide Free Device Applications • Power Management • Load Switch • Battery Protection ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.