Datasheet Details
| Part number | FDN306P |
|---|---|
| Manufacturer | onsemi |
| File Size | 286.25 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 FDN306P Datasheet
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General Description
This P
low voltage POWERTRENCH process.
It has been optimized for battery power management applications.
Key Features
- 2.6 A,.
- 12 V RDS(on) = 40 mW @ VGS =.
- 4.5 V RDS(on) = 50 mW @ VGS =.
- 2.5 V RDS(on) = 80 mW @ VGS =.
- 1.8 V.
- Fast Switching Speed.
- High Performance Trench Technology for Extremely Low RDS(on).
- SUPERSOTt.
- 3 Provides Low RDS(on) and 30% Higher Power Handling Capability than SOT.
- 23 in the Same Footprint.
- This is a Pb.
- Free and Halide Free Device.