FDN306P
Description
This P-Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications.
Key Features
- 2.6 A, –12 V RDS(on) = 40 mW @ VGS = –4.5 V RDS(on) = 50 mW @ VGS = –2.5 V RDS(on) = 80 mW @ VGS = –1.8 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- SUPERSOTt-3 Provides Low RDS(on) and 30% Higher Power Handling Capability than SOT-23 in the Same Footprint
- This is a Pb-Free and Halide Free Device
