Datasheet Summary
MOSFET
- P-Channel, 1.8 V Specified, POWERTRENCH) FDN306P
General Description This P- Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications.
Features
- - 2.6 A,
- 12 V RDS(on) = 40 mW @ VGS =
- 4.5 V
RDS(on) = 50 mW @ VGS =
- 2.5 V RDS(on) = 80 mW @ VGS =
- 1.8 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- SUPERSOTt- 3 Provides Low RDS(on) and 30% Higher Power
Handling Capability than SOT- 23 in the Same Footprint
- This is a Pb- Free and Halide Free Device
Applications
- Battery Management
- Load Switch
- Battery...
