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FDN304P - P-Channel MOSFET

General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

Battery management Load switch Battery protection

Key Features

  • 2.4 A,.
  • 20 V. RDS(ON) = 52 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 70 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 100 mΩ @ VGS =.
  • 1.8 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D D S SuperSOTTM-3 G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Dr.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDN304P January 2001 FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch • Battery protection Features • –2.4 A, –20 V. RDS(ON) = 52 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.