Datasheet Details
| Part number | FDN302P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 103.44 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 FDN302P Datasheet
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General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process.
12V).
Key Features
- 20 V,.
- 2.4 A. RDS(ON) = 0.055 Ω @ VGS =.
- 4.5 V RDS(ON) = 0.080 Ω @ VGS =.
- 2.5 V.
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON).
- SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint.