Datasheet4U Logo Datasheet4U.com

FDN302P - P-ChanneI MOSFET

General Description

This P-Channel 2.5V has been optimized for power management applications with a wide range of gate drive voltage (2.5V

2.

Key Features

  • VDS (V)=-20V ID=-2.4A RDS(ON)=55mΩ(VGS=-4.5V) RDS(ON)=80mΩ(VGS=-2.5V) 3.Pinning information Pin Symbol.

📥 Download Datasheet

Datasheet Details

Part number FDN302P
Manufacturer UMW
File Size 742.34 KB
Description P-ChanneI MOSFET
Datasheet download datasheet FDN302P Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDN302P P-Channel MOSFET Fairchild Semiconductor
FDN302P P-Channel MOSFET ON Semiconductor
FDN304P P-Channel MOSFET Fairchild Semiconductor
FDN304P P-Channel MOSFET Kexin
FDN304P P-Channel MOSFET ON Semiconductor

Other Datasheets by UMW

Part Number Description
FDN352AP -30V P-ChanneI MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UMW FDN302P P-ChanneI MOSFET 1.Description This P-Channel 2.5V has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V) 2.Features VDS (V)=-20V ID=-2.4A RDS(ON)=55mΩ(VGS=-4.5V) RDS(ON)=80mΩ(VGS=-2.5V) 3.Pinning information Pin Symbol Description SOT-23 3 1 G GATE 2 S SOURCE 3 D DRAIN 1 2 4.Maximum ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Maximum Power Dissipation(Note 1a) (Note 1b) Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) Thermal Resistance, Junction-to-Case (Note 1) Symbol VDSS VGSS ID PD TJ, TSTG RθJA RθJC D G S Value -20 ±12 -2.4 -10 0.5 0.