FDN308P Datasheet and Specifications PDF

The FDN308P is a P-Channel MOSFET.

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Part NumberFDN308P Datasheet
Manufactureronsemi
Overview This P−Channel 2.5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive volta.
*
*20 V,
*1.5 A RDS(on) = 125 mW @ VGS =
*4.5 V RDS(on) = 190 mW @ VGS =
*2.5 V
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(on)
* SUPERSOTt
*3 Provides Low RDS(on) and 30% Higher Power Handling Capability than SOT
*23 in the Same Footprint
* This is a Pb
*Free and .
Part NumberFDN308P Datasheet
DescriptionP-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive vol.
*
*20 V,
*1.5 A. RDS(ON) = 125 mΩ @ VGS =
*4.5 V RDS(ON) = 190 mΩ @ VGS =
*2.5 V
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint Applications
* Power.