FDN340P Datasheet - ON Semiconductor

P-Channel MOSFET

FDN340P Features

* 2 A, 20 V

* RDS(ON) = 70 mW @ VGS =

* 4.5 V

* RDS(ON) = 110 mW @ VGS =

* 2.5 V

* Low Gate Charge (7.2 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(ON)

* High Power Version of Industry Standard SOT

FDN340P General Description

This P *Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics ap.

FDN340P Datasheet (320.21 KB)