FDN340P mosfet equivalent, p-channel mosfet.
* −2 A, 20 V
* RDS(ON) = 70 mW @ VGS = −4.5 V
* RDS(ON) = 110 mW @ VGS = −2.5 V
* Low Gate Charge (7.2 nC Typical)
* High Performance Trench Technolog.
load switching and power management, battery charging circuits, and dc−dc conversion.
D
G
S
MARKING DIAGRAM
Featur.
This P−Channel Logic Level MOSFET is produced using onsemi
advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
These devices are well .
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