Datasheet4U Logo Datasheet4U.com

FDN340P - single P-Channel MOSFET

Datasheet Summary

Description

This P-Channel Logic Level MOSFET is produced usingFairchildSemiconductor advancedPower Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switchingperformance.

Features

  • 2A,20 V RDS(ON)=70 mΩ @ VGS =.
  • 4.5 V RDS(ON)=110 mΩ @ VGS =.
  • 2.5 V.
  • Low gate charge (7.2 nC typical).
  • Highperformance trenchtechnology for extremely low RDS(ON).
  • Highpower versionofindustryStandardSOT-23 package. Identical pin-out to SOT-23with30% higher power handlingcapability. ¡ £.
  • ¤.
  • ¦©¨£.
  • ©  ! "$#&%   ¢ AbsoluteM axim um Ratings TA=25oC unlessotherwise noted Sym bol VDSS V GSS ID PD TJ,TSTG Param ete.

📥 Download Datasheet

Datasheet preview – FDN340P

Datasheet Details

Part number FDN340P
Manufacturer Fairchild Semiconductor
File Size 202.43 KB
Description single P-Channel MOSFET
Datasheet download datasheet FDN340P Datasheet
Additional preview pages of the FDN340P datasheet.

📁 Similar Datasheet

  • FDN340P - P-Channel MOSFET (ON Semiconductor)
  • FDN342P - P-Channel MOSFET (ON Semiconductor)
  • FDN302P - P-Channel MOSFET (ON Semiconductor)
  • FDN302P - P-ChanneI MOSFET (UMW)
  • FDN304P - P-Channel MOSFET (Kexin)
  • FDN304P - P-Channel MOSFET (ON Semiconductor)
  • FDN304PZ - P-Channel MOSFET (ON Semiconductor)
  • FDN306P - P-Channel MOSFET (ON Semiconductor)
  • FDN308P - P-Channel MOSFET (ON Semiconductor)
  • FDN327N - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDN340P September 200 February 2007 FDN340P SingleP-Channel, LogicLevel, PowerTrench® MOSFET GeneralDescription This P-Channel Logic Level MOSFET is produced usingFairchildSemiconductor advancedPower Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switchingperformance. These devicesare well suited for portable electronics applications:load switching and power management, batterychargingcircuits,andDC/DC conversion. Features • –2A,20 V RDS(ON)=70 mΩ @ VGS =–4.5 V RDS(ON)=110 mΩ @ VGS =–2.5 V • Low gate charge (7.2 nC typical). • Highperformance trenchtechnology for extremely low RDS(ON). • Highpower versionofindustryStandardSOT-23 package.
Published: |