FDN340P Overview
FDN340P September 200 February 2007 FDN340P SingleP-Channel, LogicLevel, PowerTrench® MOSFET GeneralDescription This P-Channel Logic Level MOSFET is produced usingFairchildSemiconductor advancedPower Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switchingperformance. These devicesare well suited for portable electronics...
FDN340P Key Features
- 2A,20 V
- Low gate charge (7.2 nC typical)
- Highperformance trenchtechnology for extremely low RDS(ON)
- Highpower versionofindustryStandardSOT-23 package. Identical pin-out to SOT-23with30% higher power handlingcapability
- Continuous
- Pulsed
- 20 ±8 -2 -10 0.5 0.46 -55 to +150
- 12 mV/°C
- 1 -10 100 -100
- 0.8 3 60 77 82
