FDN340P Datasheet | Fairchild Semiconductor

September 200 February 2007 Single P-Channel, Logic Level, Power Trench® MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switchingperformance. These devicesare well suited for portable electronics applications:load switching and power management, batterychargingcircuits,and DC/DC conversion. Features - - 2A,20 V RDS(ON)=70 mΩ @ VGS =- 4.5 V RDS(ON)=110 mΩ @ VGS =- 2.5 V - Low gate charge (7.2 n C typical). - Highperformance trenchtechnology for extremely low RDS(ON). - Highpower versionofindustry Standard SOT-23 package. Identical pin-out to SOT-23with30% higher power handlingcapability. ¡ £- ¤- ¦©¨£- © ! "$#&%   ¢ Absolute M axim um Ratings TA=25o C unlessotherwise noted Sym bol VDSS V GSS ID TJ,TSTG Param eter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipationfor Single Operation (Note 1a) (Note 1b) Operatingand Storage Junction Temperature Range Therm al Characteristics...