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FDN340P - single P-Channel MOSFET

General Description

This P-Channel Logic Level MOSFET is produced usingFairchildSemiconductor advancedPower Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switchingperformance.

Key Features

  • 2A,20 V RDS(ON)=70 mΩ @ VGS =.
  • 4.5 V RDS(ON)=110 mΩ @ VGS =.
  • 2.5 V.
  • Low gate charge (7.2 nC typical).
  • Highperformance trenchtechnology for extremely low RDS(ON).
  • Highpower versionofindustryStandardSOT-23 package. Identical pin-out to SOT-23with30% higher power handlingcapability. ¡ £.
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  • ¦©¨£.
  • ©  ! "$#&%   ¢ AbsoluteM axim um Ratings TA=25oC unlessotherwise noted Sym bol VDSS V GSS ID PD TJ,TSTG Param ete.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDN340P September 200 February 2007 FDN340P SingleP-Channel, LogicLevel, PowerTrench® MOSFET GeneralDescription This P-Channel Logic Level MOSFET is produced usingFairchildSemiconductor advancedPower Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switchingperformance. These devicesare well suited for portable electronics applications:load switching and power management, batterychargingcircuits,andDC/DC conversion. Features • –2A,20 V RDS(ON)=70 mΩ @ VGS =–4.5 V RDS(ON)=110 mΩ @ VGS =–2.5 V • Low gate charge (7.2 nC typical). • Highperformance trenchtechnology for extremely low RDS(ON). • Highpower versionofindustryStandardSOT-23 package.