FDN340P Datasheet and Specifications PDF

This P−Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for super.

*
*2 A, 20 V
* RDS(ON) = 70 mW @ VGS =
*4.5 V
* RDS(ON) = 110 mW @ VGS =
*2.5 V
* Low Gate Charge (7.2 nC Typical)
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power Version of Industry Standard SOT
*23 Package. Identical Pin
*Out to SOT
*23 with 30% Higher Power Handling Capab.

This P-Channel Logic Level MOSFET is produced usingFairchildSemiconductor advancedPower Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate c.

*
*2A,20 V RDS(ON)=70 mΩ @ VGS =
*4.5 V RDS(ON)=110 mΩ @ VGS =
*2.5 V
* Low gate charge (7.2 nC typical).
* Highperformance trenchtechnology for extremely low RDS(ON).
* Highpower versionofindustryStandardSOT-23 package. Identical pin-out to SOT-23with30% higher power handlingcapability. ¡ £
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