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FDN342P - P-Channel MOSFET

Datasheet Summary

Description

This P

gate version of onsemi’s advanced POWERTRENCH process.

12 V).

Load Switch Battery Pr

Features

  • 2 A,.
  • 20 V.
  • RDS(ON) = 0.08 W @ VGS =.
  • 4.5 V.
  • RDS(ON) = 0.13 W @ VGS =.
  • 2.5 V.
  • Rugged gate rating (±12 V).
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • Enhanced power SUPERSOTt.
  • 3 (SOT.
  • 23) DATA SHEET www. onsemi. com D S G SOT.
  • 23/.

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Datasheet preview – FDN342P

Datasheet Details

Part number FDN342P
Manufacturer ON Semiconductor
File Size 305.34 KB
Description P-Channel MOSFET
Datasheet download datasheet FDN342P Datasheet
Additional preview pages of the FDN342P datasheet.

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Full PDF Text Transcription

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MOSFET – P-Channel, POWERTRENCH®, Specified 2.5 V FDN342P General Description This P−Channel 2.5 V specified MOSFET is produced in a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5 V − 12 V). Applications • Load Switch • Battery Protection • Power Management Features • −2 A, −20 V ♦ RDS(ON) = 0.08 W @ VGS = −4.5 V ♦ RDS(ON) = 0.13 W @ VGS = −2.5 V • Rugged gate rating (±12 V). • High Performance Trench Technology for Extremely Low RDS(ON) • Enhanced power SUPERSOTt−3 (SOT−23) DATA SHEET www.onsemi.
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