FDN342P Description
This P−Channel 2.5 V specified MOSFET is produced in a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5 V − 12 V). Applications Load Switch Battery Protection Power Management.
FDN342P Key Features
- 2 A, -20 V
- RDS(ON) = 0.08 W @ VGS = -4.5 V
- RDS(ON) = 0.13 W @ VGS = -2.5 V
- Rugged gate rating (±12 V)
- High Performance Trench Technology for Extremely Low RDS(ON)
- Enhanced power SUPERSOTt-3 (SOT-23)
- Rev. 3