FDN342P Datasheet
FDN342P Datasheet (onsemi)
onsemi
This P−Channel 2.5 V specified MOSFET is produced in a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications for a wide range of gate dr.
*
*2 A,
*20 V
* RDS(ON) = 0.08 W @ VGS =
*4.5 V
* RDS(ON) = 0.13 W @ VGS =
*2.5 V
* Rugged gate rating (±12 V).
* High Performance Trench Technology for Extremely Low RDS(ON)
* Enhanced power SUPERSOTt
*3 (SOT
*23)
DATA SHEET
D
S G SOT
*23/SUPERSOT
*3 CASE 527AG
D
G
S
MARKING DIAGRAM
.
FDN342P Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide .
-2 A, -20 V. RDS(ON) = 0.08 Ω @ VGS = -4.5 V RDS(ON) = 0.13 Ω @ VGS = -2.5 V. Rugged gate rating (±12V). High performance trench technology for extremely low RDS(ON). Enhanced power SuperSOTTM-3 (SOT-23). Applications Load switch Battery protection Power management D D S SuperSOT -.