FDN342P Datasheet | Fairchild Semiconductor

August 1999 P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V - 12V). Features • • • • -2 A, -20 V. RDS(ON) = 0.08 Ω @ VGS = -4.5 V RDS(ON) = 0.13 Ω @ VGS = -2.5 V. Rugged gate rating (±12V). High performance trench technology for extremely low RDS(ON). Enhanced power SuperSOTTM-3 (SOT-23). Applications • Load switch • Battery protection • Power management SuperSOT -3 TA = 25°C unless otherwise...