Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- Single, N-Channel, POWERTRENCH)
30 V, 6.5 A, 23 mW
VDS 30 V
RDS(ON) MAX 23 mW @ 10 V 36 mW @ 4.5 V
ID MAX 6.5 A
General Description This N- Channel MOSFET is produced using onsemi advanced
POWERTRENCH® process that has been optimized for rDS(on), switching performance and ruggedness.
Features
- Max rDS(on) = 23 mW @ VGS = 10 V, ID = 6.5 A
- Max rDS(on) = 36 mW @ VGS = 4.5 V, ID = 6.0 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb- Free and is RoHS pliant
Application
- Primary DC-...
