FDN537N Datasheet | Fairchild Semiconductor

Features General Description - Max r DS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A - Max r DS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A - High performance trench technology for extremely low r DS(on) - High power and current handling capability in a widely used surface mount package - Fast switching speed - 100% UIL Tested - Ro HS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for r DS(on), switching performance and ruggedness. Application - Primary DC-DC Switch MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25 °C -Continuous TA = 25 °C -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1a) (Note 1a) (Note 1b) Ratings 30 ±20 8.0 6.5 25 1.5 0.6 -55 to +150 Units V V W °C RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note...