FDN537N Description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized...
FDN537N Key Features
- Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
- Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- Fast switching speed
- 100% UIL Tested
- RoHS pliant
- Primary DC-DC Switch
- Continuous
- Pulsed