FDN537N Description
This N−Channel MOSFET is produced using onsemi advanced POWERTRENCH® process that has been optimized for rDS(on), switching performance and ruggedness.
FDN537N Key Features
- Max rDS(on) = 23 mW @ VGS = 10 V, ID = 6.5 A
- Max rDS(on) = 36 mW @ VGS = 4.5 V, ID = 6.0 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb-Free and is RoHS pliant
- Primary DC-DC Switch