FDN537N
FDN537N is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel MOSFET is produced using onsemi advanced
POWERTRENCH® process that has been optimized for r DS(on), switching performance and ruggedness.
Features
- Max r DS(on) = 23 m W @ VGS = 10 V, ID = 6.5 A
- Max r DS(on) = 36 m W @ VGS = 4.5 V, ID = 6.0 A
- High Performance Trench Technology for Extremely Low r DS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb- Free and is Ro HS pliant
Application
- Primary DC- DC Switch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Value Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage (Note 3)
±20
Drain Current
Continuous (Package
A limited) TC = 25°C
Continuous (Note 1a)
TA = 25°C
Pulsed
PD Power Dissipation (Note 1a) (Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
- 55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
S SOT- 23/SUPERSOTt- 23, 3 LEAD,...
