FDN537N - N-Channel MOSFET

onsemi

General Description

This N

POWERTRENCH® process that has been optimized for rDS(on), switching performance and ruggedness.

Key Features

Max rDS(on) = 23 mW @ VGS = 10 V, ID = 6.5 A.
Max rDS(on) = 36 mW @ VGS = 4.5 V, ID = 6.0 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free and is RoHS Compliant.

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FDN537N n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDN537N
Manufacturer	onsemi
File Size	352.44 KB
Description	N-Channel MOSFET
Datasheet	FDN537N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com MOSFET – Single, N-Channel, POWERTRENCH) 30 V, 6.5 A, 23 mW VDS 30 V RDS(ON) MAX 23 mW @ 10 V 36 mW @ 4.5 V ID MAX 6.5 A FDN537N General Description This N−Channel MOSFET is produced using onsemi advanced POWERTRENCH® process that has been optimized for rDS(on), switching performance and ruggedness. Features • Max rDS(on) = 23 mW @ VGS = 10 V, ID = 6.5 A • Max rDS(on) = 36 mW @ VGS = 4.5 V, ID = 6.