FDN8601 Datasheet - ON Semiconductor

N-Channel MOSFET

* Max rDS(on) = 109 mW at VGS = 10 V, ID = 1.5 A

* Max rDS(on) = 175 mW at VGS = 6 V, ID = 1.2 A

* High Performance Trench Technology for Extremely Low rDS(on)

* High Power and Current Handling Capability in a Widely Used Surface Mount Package

* Fast Switching

FDN8601

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N-channel mosfet.

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FDN8601 N-Channel MOSFET ON Semiconductor

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