Datasheet4U Logo Datasheet4U.com

FDN8601 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel, POWERTRENCH) 100 V, 2.7 A, 109 mW FDN8601.

General Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.

Key Features

  • Max rDS(on) = 109 mW at VGS = 10 V, ID = 1.5 A.
  • Max rDS(on) = 175 mW at VGS = 6 V, ID = 1.2 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDN8601 MOSFET Fairchild Semiconductor

More Datasheets from onsemi

Part Number Description
FDN86246 N-Channel MOSFET
FDN86265P P-Channel MOSFET
FDN86501LZ N-Channel MOSFET
FDN028N20 N-Channel MOSFET
FDN302P P-Channel MOSFET
FDN304P P-Channel MOSFET
FDN304PZ P-Channel MOSFET
FDN306P P-Channel MOSFET
FDN308P P-Channel MOSFET
FDN327N N-Channel MOSFET

FDN8601 Distributor