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FDN86246 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel, POWERTRENCH) 150 V, 1.6 A, 261 mW FDN86246.

General Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.

Key Features

  • Max rDS(on) = 261 mW at VGS = 10 V, ID = 1.6 A.
  • Max rDS(on) = 359 mW at VGS = 6 V, ID = 1.4 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • Pb.
  • Free, Halide Free and RoHS Compliant.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDN86246 MOSFET Fairchild Semiconductor

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