Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
150 V, 1.6 A, 261 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.
Features
- Max rDS(on) = 261 mW at VGS = 10 V, ID = 1.6 A
- Max rDS(on) = 359 mW at VGS = 6 V, ID = 1.4 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- Fast Switching Speed
- 100% UIL Tested
- Pb- Free, Halide Free and RoHS pliant
Application
- PD...
