FDN86265P mosfet equivalent, p-channel mosfet.
* Max rDS(on) = 1.2 W at VGS =
–10 V, ID = −0.8 A
Max rDS(on) = 1.4 W at VGS =
–6 V, ID = −0.7 A
* Very Low RDS−on Mid Voltage P−C.
as
Well as Load Switch Applications
* 100% UIL Tested
* Pb−Free, Halide Free and RoHS Compliant
Applications
This P−Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that has been optimized for the on−state resistance and yet maintain superior switching performance.
Features
* Max rDS(on) = 1.2 W at VGS =
–10 V, ID =.
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