Datasheet4U Logo Datasheet4U.com

FDN86501LZ - N-Channel MOSFET

Description

This N

POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.6 A.
  • Max rDS(on) = 173 mW at VGS = 4.5 V, ID = 2.1 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FDN86501LZ

Datasheet Details

Part number FDN86501LZ
Manufacturer ON Semiconductor
File Size 356.27 KB
Description N-Channel MOSFET
Datasheet download datasheet FDN86501LZ Datasheet
Additional preview pages of the FDN86501LZ datasheet.

📁 Similar Datasheet

  • FDN86501LZ - MOSFET (Fairchild Semiconductor)
  • FDN8601 - MOSFET (Fairchild Semiconductor)
  • FDN8601 - N-Channel MOSFET (TY Semiconductor)
  • FDN86246 - MOSFET (Fairchild Semiconductor)
  • FDN86265P - MOSFET (Fairchild Semiconductor)
  • FDN302P - P-Channel MOSFET (Fairchild Semiconductor)
  • FDN302P - P-ChanneI MOSFET (UMW)
  • FDN304P - P-Channel MOSFET (Fairchild Semiconductor)
  • FDN304P - P-Channel MOSFET (Kexin)
  • FDN304PZ - P-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 60 V, 2.6 A, 116 mW FDN86501LZ General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Features • Shielded Gate MOSFET Technology • Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.6 A • Max rDS(on) = 173 mW at VGS = 4.5 V, ID = 2.
Published: |