Datasheet Summary
MOSFET
- N-Channel, Shielded Gate, POWERTRENCH)
60 V, 2.6 A, 116 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.6 A
- Max rDS(on) = 173 mW at VGS = 4.5 V, ID = 2.1 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb- Free, Halide Free and is RoHS...
