FDN86501LZ - N-Channel MOSFET

ON Semiconductor

FDN86501LZ Datasheet Preview — Preview of FDN86501LZ PDF

Datasheet Details

Part number	FDN86501LZ
Manufacturer	ON Semiconductor ↗
File Size	356.27 KB
Description	N-Channel MOSFET
Datasheet	FDN86501LZ-ONSemiconductor.pdf

FDN86501LZ Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.This process has been optimized for rDS(on), switching performance and ruggedness.

Features

Shielded Gate MOSFET Technology.
Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.6 A.
Max rDS(on) = 173 mW at VGS = 4.5 V, ID = 2.1 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 25, 2023 |