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FDP027N08B Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: FDP027N08B — N-Channel PowerTrench® MOSFET FDP027N08B N-Channel PowerTrench® MOSFET 80 V, 223 A, 2.

General Description

This N-Channel MOSFET is produced using ON Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.

Symbol Parameter FDP027N08B_F102 VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) 80 ±20 223* 158* 120 892 917 6.0 246 1.64 TJ, TSTG Operating and Storage Temperature Range -55 to +175 TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 *Calculated continuous current based on maximum allowable junction temperature.

Key Features

  • RDS(on) = 2.21 mΩ ( Typ. ) @ VGS = 10 V, ID = 100 A.
  • Low FOM RDS(on).
  • QG.
  • Low Reverse-Recovery Charge, Qrr = 112 nC.
  • Soft Reverse-Recovery Body Diode.
  • Enables High Efficiency in Synchronous Rectification.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • This device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDP027N08B N-Channel PowerTrench MOSFET Fairchild Semiconductor

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