Datasheet4U Logo Datasheet4U.com

FDP027N08B - N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification for ATX / Server / Telecom PSU Battery Protec

Key Features

  • RDS(on) = 2.21 mΩ ( Typ. ) @ VGS = 10 V, ID = 100 A.
  • Low FOM RDS(on).
  • QG.
  • Low Reverse-Recovery Charge, Qrr = 112 nC.
  • Soft Reverse-Recovery Body Diode.
  • Enables High Efficiency in Synchronous Rectification.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDP027N08B N-Channel MOSFET ON Semiconductor
FDP030N06 N-Channel MOSFET INCHANGE
FDP032N08 N-Channel MOSFET INCHANGE
FDP036N10A N-Channel MOSFET INCHANGE
FDP038AN06A0 N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDP020N06B N-Channel PowerTrench MOSFET
FDP023N08B MOSFET
FDP025N06 MOSFET
FDP030N06 MOSFET
FDP030N06B_F102 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP027N08B — N-Channel PowerTrench® MOSFET FDP027N08B N-Channel PowerTrench® MOSFET 80 V, 223 A, 2.7 mΩ November 2013 Features • RDS(on) = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 112 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.