Datasheet Summary
- N-Channel PowerTrench® MOSFET
N-Channel PowerTrench® MOSFET
80 V, 223 A, 2.7 mΩ
Features
- RDS(on) = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A
- Low FOM RDS(on)
- QG
- Low Reverse-Recovery Charge, Qrr = 112 nC
- Soft Reverse-Recovery Body Diode
- Enables High Efficiency in Synchronous Rectification
- Fast Switching Speed
- 100% UIL Tested
- This device is Pb-Free, Halogen Free/BFR Free and is RoHS pliant
Description
This N-Channel MOSFET is produced using ON Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
- Synchronous Rectification for ATX / Server /...
