Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
150 V, 79 A, 16 mW
FDP2532, FDB2532
Features
- RDS(on) = 14 mW (Typ.) @ VGS = 10 V, ID = 33 A
- QG(tot) = 82 nC (Typ.) @ VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- These Devices are Pb- Free, Halide Free and are RoHS pliant
Applications
- Consumer Appliances
- Synchronous Rectification
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
- Micro Solar Inverter
MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted)
Symbol
Parameter
FDP2532 / FDB2532 Unit
VDSS Drain to Source Voltage
VGS Gate to Source Voltage
+20
Drain Current
Continuous...
