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FDP8874 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: FDP8874 FDP8874 N-Channel PowerTrench® MOSFET 30V, 114A, 5.3mΩ General.

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Applications • DC/DC converters

Key Features

  • rDS(ON) = 5.3mΩ, VGS = 10V, ID = 40A.
  • rDS(ON) = 6.6mΩ, VGS = 4.5V, ID = 40A.
  • High performance trench technology for extremely low rDS(ON).
  • Low gate charge.
  • High power and current handling capability.
  • RoHS Compliant (FLANGE) DRAIN SOURCE DRAIN GATE G TO-220AB FDP SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC.

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