Datasheet Summary
November 2004
N-Channel PowerTrench® MOSFET 30V, 114A, 5.3mΩ
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using .. either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Features
- rDS(ON) = 5.3mΩ , VGS = 10V, ID = 40A
- rDS(ON) = 6.6mΩ , VGS = 4.5V, ID = 40A
- High performance trench technology for extremely low rDS(ON)
- Low gate charge
Applications
- DC/DC converters
- High power and current handling capability
DRAIN (FLANGE)
SOURCE DRAIN GATE
TO-220AB
FDP SERIES
MOSFET...
