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FDP8876 - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to

Features

  • rDS(ON) = 8.5mΩ, VGS = 10V, ID = 40A.
  • rDS(ON) = 10.3mΩ, VGS = 4.5V, ID = 40A.
  • High performance trench technology for extremely low rDS(ON).
  • Low gate charge.
  • High power and current handling capability.
  • RoHS Compliant www. DataSheet4U. com improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. DRAIN (.

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Datasheet preview – FDP8876

Datasheet Details

Part number FDP8876
Manufacturer Fairchild Semiconductor
File Size 336.65 KB
Description N-Channel MOSFET
Datasheet download datasheet FDP8876 Datasheet
Additional preview pages of the FDP8876 datasheet.

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Full PDF Text Transcription

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FDP8876 N-Channel PowerTrench® MOSFET November 2005 FDP8876 N-Channel PowerTrench® MOSFET 30V, 71A, 8.5mΩ General Descriptions This N-Channel MOSFET has been designed specifically to Features „ rDS(ON) = 8.5mΩ, VGS = 10V, ID = 40A „ rDS(ON) = 10.3mΩ, VGS = 4.5V, ID = 40A „ High performance trench technology for extremely low rDS(ON) „ Low gate charge „ High power and current handling capability „ RoHS Compliant www.DataSheet4U.com improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
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