FDP8876 Description
FDP8876 N-Channel PowerTrench® MOSFET November 2005 FDP8876 N-Channel PowerTrench® MOSFET 30V, 71A, 8.5mΩ General Descriptions This N-Channel MOSFET has been designed specifically.
FDP8876 Key Features
- rDS(ON) = 8.5mΩ, VGS = 10V, ID = 40A
- rDS(ON) = 10.3mΩ, VGS = 4.5V, ID = 40A
- High performance trench technology for extremely low rDS(ON)
- Low gate charge
- High power and current handling capability
- RoHS pliant
- 1700 340 210 2.3 32 17 1.6 4.7 3.1 7.0
- pF pF pF Ω nC nC nC nC nC nC