FDP8876 Datasheet | Fairchild Semiconductor

FDP8876 N-Channel PowerTrench® MOSFET November 2005 FDP8876 N-Channel PowerTrench® MOSFET 30V, 71A, 8.5mΩ General Descriptions This N-Channel MOSFET has been designed specifically to Features - rDS(ON) = 8.5mΩ, VGS = 10V, ID = 40A - rDS(ON) = 10.3mΩ, VGS = 4.5V, ID = 40A - High performance trench technology for extremely low rDS(ON) - Low gate charge - High power and current handling capability - RoHS pliant .. improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. DRAIN (FLANGE) SOURCE DRAIN GATE TO-220AB FDP...