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FDPF041N06BL1-F154 Datasheet

N-Channel MOSFET

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MOSFET – N-Channel,
POWERTRENCH)
60 V, 77 A, 4.1 mW
FDPF041N06BL1-F154
Description
This NChannel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that has been tailored to
minimize the onstate resistance while maintaining superior switching
performance.
Features
RDS(on) = 3.5 mW (Typ.)@ VGS = 10 V, ID = 77 A
Low FOM RDS(on)*QG
Low Reverse Recovery Charge, Qrr
Soft Reverse Recovery Body Diode
Enables Highly Efficiency in Synchronous Rectification
Fast Switching Speed
100% UIL Tested
These Devices are PbFree and are RoHS Compliant
Applications
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
Renewable System
www.onsemi.com
VDSS
60 V
RDS(ON) MAX
4.1 mW @ 10 V
ID MAX
77 A
D
G
S
MOSFET
GDS
TO220F Ultra Narrow Lead
CASE 221BN
MARKING DIAGRAM
$Y&Z&3&K
FDPF
041N06BL1
© Semiconductor Components Industries, LLC, 2020
December, 2020 Rev. 0
$Y
&Z
&3
&K
FDPF041N06BL1
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FDPF041N06BL1F154/D


  ON Semiconductor Electronic Components Datasheet  

FDPF041N06BL1-F154 Datasheet

N-Channel MOSFET

No Preview Available !

FDPF041N06BL1F154
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain to Source Voltage
60
VGSS
Gate to Source Voltage
±20
ID
Drain Current
Continuous (TC = 25°C, Silicon Limited)
77
Continuous (TC = 100°C, Silicon Limited)
55
IDM
Drain Current
Pulsed (Note 1)
308
EAS
Single Pulsed Avalanche Energy (Note 2)
365
dv/dt
Peak Diode Recovery dv/dt (Note 3)
6.0
V
V
A
A
mJ
V/ns
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
44.1
W
0.29
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8from Case for 5 Seconds
55 to +175
°C
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulsewidth limited by maximum junction temperature.
2. L = 3 mH, IAS = 15,6 A, starting TJ = 25°C.
3. ISD 100 A, di/dt 200 A/ms, VDD BVDSS, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
3.4
62.5
Unit
_C/W
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
FDPF041N06BL1F154
FDPF041N06BL1
Package
TO220F
(PbFree)
Quantity
50 Units / Tube
www.onsemi.com
2


Part Number FDPF041N06BL1-F154
Description N-Channel MOSFET
Maker ON Semiconductor
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