FDPF041N06BL1-F154 Overview
Description
This N-Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Key Features
- RDS(on) = 3.5 mW (Typ.)@ VGS = 10 V, ID = 77 A
- Low FOM RDS(on)*QG
- Low Reverse Recovery Charge, Qrr
- Soft Reverse Recovery Body Diode
- Enables Highly Efficiency in Synchronous Rectification
- Fast Switching Speed
- 100% UIL Tested
- These Devices are Pb-Free and are RoHS Compliant
