FDPF041N06BL1−F154
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain to Source Voltage
60
VGSS
Gate to Source Voltage
±20
ID
Drain Current
− Continuous (TC = 25°C, Silicon Limited)
77
− Continuous (TC = 100°C, Silicon Limited)
55
IDM
Drain Current
− Pulsed (Note 1)
308
EAS
Single Pulsed Avalanche Energy (Note 2)
365
dv/dt
Peak Diode Recovery dv/dt (Note 3)
6.0
V
V
A
A
mJ
V/ns
PD
Power Dissipation
(TC = 25°C)
− Derate Above 25°C
44.1
W
0.29
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8″ from Case for 5 Seconds
−55 to +175
°C
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. L = 3 mH, IAS = 15,6 A, starting TJ = 25°C.
3. ISD ≤ 100 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
3.4
62.5
Unit
_C/W
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
FDPF041N06BL1−F154
FDPF041N06BL1
Package
TO−220F
(Pb−Free)
Quantity
50 Units / Tube
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