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FDS2572 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel, UltraFET TRENCH 150 V, 0.047 mW 4.9 A FDS2572.

General Description

UltraFET Devices Combine Characteristics that enable benchmark efficiency in power conversion applications.

Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC−DC converters.

Key Features

  • RDS(on) = 0.040 mW (Typ. ), VGS = 10 V.
  • Qg(TOT) = 29 nC (Typ. ), VGS = 10 V.
  • Low QRR Body Diode.
  • Maximized Efficiency at High Frequencies.
  • UIS Rated.
  • These Device is Pb.
  • Free and Halide Free Typical.

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