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FDS2572 - N-Channel MOSFET

General Description

® UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.

Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Key Features

  • RDS(ON) = 0.040Ω (Typ. ), VGS = 10V.
  • Qg(TOT) = 29nC (Typ. ), VGS = 10V.
  • Low QRR Body Diode.
  • Maximized efficiency at high frequencies.
  • UIS Rated.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS2572 October 2001 FDS2572 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET® Trench MOSFET General Description ® UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features • RDS(ON) = 0.040Ω (Typ.), VGS = 10V • Qg(TOT) = 29nC (Typ.