Datasheet Summary
October 2001
150V, 0.047 Ohms, 4.9A, N-Channel UltraFET® Trench MOSFET
General Description
® UltraFET devices bine characteristics that enable benchmark efficiency in power conversion applications. Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Features
- RDS(ON) = 0.040Ω (Typ.), VGS = 10V
- Qg(TOT) = 29nC (Typ.), VGS = 10V
- Low QRR Body Diode
- Maximized efficiency at high frequencies
- UIS Rated
Applications
- -
- - DC/DC converters Tele and Data- Distributed Power Architectures 48-volt I/P Half-Bridge/Full-Bridge 24-volt Forward and Push-Pull topologies
D D SO-8
DD D...
