Datasheet Summary
MOSFET
- N-Channel, UltraFET TRENCH
150 V, 0.047 mW 4.9 A
Description UltraFET Devices bine Characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC- DC converters.
Features
- RDS(on) = 0.040 mW (Typ.), VGS = 10 V
- Qg(TOT) = 29 nC (Typ.), VGS = 10 V
- Low QRR Body Diode
- Maximized Efficiency at High Frequencies
- UIS Rated
- These Device is Pb- Free and Halide Free
Typical Applications
- DC- DC Converters
- Tele and Data- Distributed Power Architectures
- 48- volt I/P Half- Bridge/Full- Bridge
- 24- volt Forward and Push- Pull topologies
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