FDS2572 Overview
UltraFET Devices bine Characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC−DC converters.
FDS2572 Key Features
- RDS(on) = 0.040 mW (Typ.), VGS = 10 V
- Qg(TOT) = 29 nC (Typ.), VGS = 10 V
- Low QRR Body Diode
- Maximized Efficiency at High Frequencies
- UIS Rated
- These Device is Pb-Free and Halide Free
