FDS2572 - N-Channel MOSFET

onsemi

General Description

efficiency in power conversion applications.

DC converters.

Key Features

RDS(on) = 0.040 mW (Typ. ), VGS = 10 V.
Qg(TOT) = 29 nC (Typ. ), VGS = 10 V.
Low QRR Body Diode.
Maximized Efficiency at High Frequencies.
UIS Rated.
These Device is Pb.
Free and Halide Free Typical.

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FDS2572 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDS2572
Manufacturer	onsemi
File Size	373.91 KB
Description	N-Channel MOSFET
Datasheet	FDS2572 Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET – N-Channel, UltraFET TRENCH 150 V, 0.047 mW 4.9 A FDS2572 Description UltraFET Devices Combine Characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC−DC converters. Features • RDS(on) = 0.040 mW (Typ.), VGS = 10 V • Qg(TOT) = 29 nC (Typ.), VGS = 10 V • Low QRR Body Diode • Maximized Efficiency at High Frequencies • UIS Rated • These Device is Pb−Free and Halide Free Typical Applications • DC−DC Converters • Telecom and Data−Com Distributed Power Architectures • 48−volt I/P Half−Bridge/Full−Bridge • 24−volt Forward and Push−Pull topologies DATA SHEET www.onsemi.