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FDS4685 - 40V P-Channel Power MOSFET

Description

This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process.

20V).

Features

  • 8.2 A,.
  • 40 V RDS(ON) = 0.027 Ω @ VGS =.
  • 10 V RDS(ON) = 0.035 Ω @ VGS =.
  • 4.5 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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Datasheet preview – FDS4685

Datasheet Details

Part number FDS4685
Manufacturer onsemi
File Size 624.06 KB
Description 40V P-Channel Power MOSFET
Datasheet download datasheet FDS4685 Datasheet
Additional preview pages of the FDS4685 datasheet.

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Full PDF Text Transcription

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FDS4685 40V P-Channel PowerTrench® MOSFET FDS4685 40V P-Channel PowerTrench® MOSFET Features ■ –8.2 A, –40 V RDS(ON) = 0.027 Ω @ VGS = –10 V RDS(ON) = 0.035 Ω @ VGS = –4.5 V ■ Fast switching speed ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability Applications ■ Power management ■ Load switch ■ Battery protection General Description This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).
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