FDS5690 Overview
Features This N-Channel MOSFET is produced using Semiconductor's advanced PowerTrench process ON that 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V has been especially tailored to minimize on-state RDS(on) = 0.033 Ω @ VGS = 6 V. resistance and yet maintain superior switching performance.
FDS5690 Key Features
- 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V
- Low gate charge (23nC typical)
- Fast switching speed
FDS5690 Applications
- High performance trench technology for extremely
