Click to expand full text
FDS5690
FDS5690
60V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET is produced using Semiconductor's advanced PowerTrench process
ON that
•
7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V
has been especially tailored to minimize on-state
RDS(on) = 0.033 Ω @ VGS = 6 V.
resistance and yet maintain superior switching
performance.
• Low gate charge (23nC typical).
These devices are well suited for low voltage and battery • Fast switching speed.
powered applications where fast switching are required.
low
in-line
power
loss
and • High performance trench technology for extremely
low RDS(ON).
Applications
• High power and current handling capability.
FDS5690 Datasheet
