FDS5690
FDS5690 is 60V N-Channel Power MOSFET manufactured by onsemi.
Description
Features
This N-Channel MOSFET is produced using Semiconductor's advanced Power Trench process
ON that
- 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V has been especially tailored to minimize on-state
RDS(on) = 0.033 Ω @ VGS = 6 V. resistance and yet maintain superior switching performance.
- Low gate charge (23n C typical).
These devices are well suited for low voltage and battery
- Fast switching speed. powered applications where fast switching are required. low in-line power loss and
- High performance trench technology for extremely low RDS(ON).
Applications
- High power and current handling capability.
- DC/DC converter
- Motor drives
SO-8
G SS S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed Power Dissipation for Single Operation
(Note 1a)
(Note 1a) (Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Ratings
60...
