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FDS6898AZ-F085 - Dual N-Channel MOSFET

FDS6898AZ-F085 Description

FDS6898AZ-F085 Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET FDS6898AZ-F085 Dual N-Channel Logic Level PWM Optimized PowerTrench® MO.
Features These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailor.

FDS6898AZ-F085 Features

* These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
* 9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ

FDS6898AZ-F085 Applications

* where low in-line power loss and fast switching are required.
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability
* Qualified to AEC Q101
* RoHS Compliant DD2DD1DD1 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 5 4 6

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Dual N-Channel MOSFET ON Semiconductor
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