FDS6898AZ-F085 Datasheet | onsemi

Description Features These N-Channel Logic Level MOSFETs are produced using Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. - 9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V - Low gate charge (16 n C typical) - ESD protection diode (note 3) These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. - High performance trench technology for extremely low RDS(ON) - High power and current handling capability - Qualified to AEC Q101 - Ro HS pliant DD2DD1DD1 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 Q1 Q2 Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note...