FDS6910 mosfet equivalent, dual n-channel mosfet.
* 7.5 A, 30 V.
RDS(ON) = 13 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V
* Fast switching speed
* Low gate charge
* High performance trench technolo.
where low in-line power loss and fast switching are required.
Features
* 7.5 A, 30 V.
RDS(ON) = 13 mΩ @ VGS = 10 .
These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suite.
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