Description
These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
- 7.5 A, 30 V. RDS(ON) = 13 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V.
- Fast switching speed.
- Low gate charge.
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability
DD1 DD1 DD2 DD2
SO-8
Pin 1 SO-8
SS2GS2SS1GG1
5 6 Q1 7
Q2
8
4 3 2 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current.
- C.
FDS6910-ONSemiconductor.pdf
